Epitaxial lift off systems and methods

ABSTRACT

Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process.

RELATED APPLICATIONS

The present application is a divisional of application Ser. No.13/039,307 filed Mar. 2, 2011, which claims the benefit of priority toProvisional Application 61/309,625 (Attorney Docket Number ALTA/0025USL)entitled “Reduced Etchant Consumption Methods and Apparatus forTape-Based Epitaxial Lift Off” filed Mar. 2, 2010, which are allincorporated herein by reference.

FIELD OF THE INVENTION

Embodiments of the invention generally relate to apparatus and methodsfor epitaxial lift off (ELO) processes, including reducing etchantconsumption and volume during ELO processes.

BACKGROUND

Various devices and circuits are often utilized in a number ofapplications to achieve advantageous results. The devices and circuitscan be utilized to increase productivity and reduce costs in a varietyof activities (e.g., power generation, information processing,communication, etc.). The devices (e.g., including photovoltaic devices,solar conversion devices, solar cell devices, opto-electric devices,optical devices, photonic devices, mechanical devices, semiconductordevices, electronic thin film devices, other thin film devices, etc.)can include thin films or layers. Manufacturing and utilizing thin filmdevices can be very complex and complicated.

Conventional manufacturing techniques typically involve a relativelylarge volume of etchant (e.g., HF, etc.). The etchant is usually used toremove a sacrificial layer during an epitaxial lift of process.Traditional etchant approaches are often rather expensive and increasethe cost of the ELO process. In addition, the ethcants (e.g., Hydrogenfluoride, hydrofluoric acid, fluorine, derivatives thereof, combinationsthereof, etc.) can be extremely hazardous compounds in large quantities.Added expensive safety precautions to guard against system leaks,contamination and evaporation are often required when increased largevolumes of etchant chemicals are used in fabrication processes. Forexample, regulatory organizations (e.g., Occupational Safety and HealthAdministration (OSHA), etc.) typically rate fabrication processesdifferently when large amounts of hydrogen fluoride or hydrofluoric acidare used. The corresponding requisite safety precautions often result inhigher facility construction costs and higher operational costs. Largevolumes of hydrogen fluoride or hydrofluoric acid can also create otherinconveniences. For example, fabrication facility location can berestricted.

SUMMARY OF THE INVENTION

Epitaxial lift off systems and methods are presented. In one embodiment,a tape is disposed on the opposite side of the epitaxial material than asubstrate and is used to transport and manipulate (e.g., peel, pull,etc.) a portion of the epitaxial material during the etching and removalsteps of the ELO process. The manipulation can be directed to widening agap between a substrate and an epitaxial lift off component to enableincrease etchant access to an etchant front. In various embodiments, theapparatus for removing the ELO film from the substrates without damagingthe ELO film may include an etchant reservoir, substrate handling andtape handling mechanisms, including mechanisms to manipulate (e.g.,cause tension, peel, widen the etch gap, etc.) the lift off componentduring the lift off process.

In one embodiment, the system includes an etchant application component,a separation assistance component and a tape application component. Theetchant application component is configured to apply etchant to asacrificial layer between an epitaxial lift off component and a growthsubstrate. The separation assistance component is configured tomanipulate the epitaxial lift off component to assist separation of theepitaxial lift off component from the substrate, wherein manipulation ofthe epitaxial lift off component is controlled to facilitate exposure ofan etchant to an etch face of the sacrificial etch layer. The tapeapplication component is configured to couple the epitaxial lift offcomponent to a tape, wherein the tape assists the manipulation andtransportation of an epitaxial lift off component while etchant isapplied to the sacrificial layer. The manipulation by the separationassistance component includes applying a force to increase a gapdistance between portions of the epitaxial lift off component and thegrowth substrate prior to final separation. In one embodiment, the forceis applied to the tape and the tape pulls on the epitaxial lift offcomponent. In one embodiment, the manipulation by the separationassistance component includes applying a force to assist mitigation ofadverse impacts associated with final separation of the epitaxial liftoff component from the growth substrate.

In one embodiment, the separation assistance component includes a drivelink ramp including an elongated slot and having a height that increasesfrom the first end of the apparatus through the etching section; and achain drive comprising a plurality of drive pins, the plurality of drivepins extend through the plurality of slots in the tape and into theelongated slots, wherein the chain drive drives the tape along the drivelink ramp causing the sides of the tape along and up the increasingheight of the drive link ramps. In one exemplary implementation, theseparation assistance component further comprises a plurality of pointloads that contact the center of the tape as the tape is driven alongand up the increasing height of the drive link ramps.

In one embodiment, the separation assistance component includes twoguide rails, each guide rail including a slot that receives one side ofthe tape, and a plurality of index pin receiving holes; and two pinrails, each pin rail including a plurality of index pins; wherein thepin rails are operable to be lowered with respect to the guide railssuch that the plurality of index pins extend into the index pinreceiving holes and through the plurality of slots along the sides ofthe tape; and wherein the pin rails and the guide rails are operable toraise the sides of the tape. In one exemplary implementation, theseparation assistance component further comprises a weight bar thatprovides force on a center of the tape and substrates. In one exemplaryimplementation the etchant application component includes: a substratepocket configured to support the substrate and hold the etchant; and anetchant supply component configured to deliver etchant to the substrateand the substrate pocket.

In one embodiment, the separation assistance component includes aplurality of roller drive shafts each roller driveshaft supporting oneroller of the series of rollers; a plurality of driven miter gears, eachmiter gear mounted on the end of one of the plurality of roller driveshafts; and a gear driveshaft including a plurality of driving mitergears, each driving miter gear engaging one of the driven miter gears,such that when the gear driveshaft is driven the series of rollersrotate to support the tape and substrate assembly as it proceeds throughthe etching section. In one exemplary implementation, an etchant supplycomprises a plurality of etching spray nozzles that direct an etchantspray toward the tape and substrate assembly in the etching section,either continuously or periodically. The etchant delivery systems canroute the etchant to the sacrificial layer between the tape andsubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and form a part ofthis specification, are included for exemplary illustration of theprinciples of the present embodiments and not intended to limit thepresent invention to the particular implementations illustrated therein.The drawings are not to scale unless otherwise specifically indicated.

FIG. 1A is a block diagram of an exemplary lift off separation system inaccordance with one embodiment of the present invention.

FIG. 1B is a block diagram of an exemplary epitaxial lift off componentincluding a device structure and optional support structure inaccordance with one embodiment of the present invention.

FIG. 1C is a block diagram of an exemplary lift off separation system inaccordance with one embodiment of the present invention.

FIG. 1D is a block diagram of an exemplary lift off separation system asa sacrificial layer is being etched away in accordance with oneembodiment of the present invention.

FIG. 1E is a block diagram of an exemplary lift off separation systemafter a sacrificial layer is etched away in accordance with oneembodiment of the present invention.

FIG. 1F is a block diagram of an exemplary lift off separation system“separated” and “un-bent” configuration for a lift off component inaccordance with one embodiment of the present invention.

FIG. 2A is a side view of an assembly formed of a plurality of ELOstacks and substrates adhered to a support tape, according toembodiments of the invention.

FIG. 2B is a plan view of the bottom of the assembly of FIG. 2A.

FIG. 2C is a side view of an assembly formed of a plurality of ELOstacks attached to a support tape, according to embodiments of theinvention.

FIG. 2D is a side view of the assembly of FIG. 2C being wound on asupport roll, according to embodiments of the invention.

FIG. 2E is a side view of an assembly including the assembly of FIG. 2Cwound on a support roll, according to embodiments of the invention.

FIG. 3A is a schematic plan view of one embodiment of an apparatus forforming tape based ELO materials and devices in accordance with oneembodiment of the present invention.

FIG. 3B is a flow chart of an exemplary epitaxial lift off method inaccordance with one embodiment of the present invention.

FIG. 4 is a schematic isometric view of one embodiment of an apparatusfor performing a continuous ELO process to remove ELO stacks fromsupport substrates.

FIG. 5 is an enlarged overhead isometric view of the chain drive andtensioning portion of the apparatus of FIG. 4.

FIG. 6 is an exploded isometric view of the apparatus of FIG. 4.

FIG. 7 is an isometric view of a tape and substrate tank entry assemblyfor use with embodiments of the ELO process apparatus of the invention.

FIG. 8 is an isometric view of a tape extraction assembly for use withembodiments of the ELO process apparatus of the invention.

FIG. 9 is an isometric view of a positive substrate detachment assemblyfor use with embodiments of the ELO process apparatus of the invention.

FIG. 10 is a schematic side view of the apparatus of FIG. 4.

FIG. 10A is a cross section through section line 10A-10A of FIG. 10.

FIG. 10B is a cross section through section line 10B-10B of FIG. 10.

FIG. 10C is a cross section through section line 10C-10C of FIG. 10.

FIG. 10D is a cross section through section line 10D-10D of FIG. 10.

FIG. 10E is a cross section through section line 10E-10E of FIG. 10.

FIG. 10F is a cross section through section line 10E-10F of FIG. 10.

FIG. 10G is a cross section through section line 10G-10G of FIG. 10.

FIG. 11 is a schematic isometric view of one embodiment of an apparatusfor performing a batch ELO process to remove ELO stacks from supportsubstrates.

FIG. 12 is an enlarged overhead isometric view of the tensioning portionof the apparatus of FIG. 11.

FIG. 13 is an exploded isometric view of the apparatus of FIG. 11.

FIG. 14 is a schematic side view of the apparatus of FIG. 11.

FIGS. 15A-15E is a cross sections through section line 15-15 of FIG. 14during various stages of the operation of the apparatus of FIG. 11.

FIG. 16 is a schematic isometric view of another embodiment of anapparatus for performing a batch ELO process to remove ELO stacks fromsupport substrates.

FIG. 17 is an enlarged isometric view of a portion of the apparatus ofFIG. 16.

FIG. 18 is an enlarged isometric view of another portion of theapparatus of FIG. 16.

FIG. 19 is a schematic side view of the apparatus of FIG. 16.

FIGS. 20A-20D are cross sections through section line 20-20 of FIG. 19,during various stages of the operation of the apparatus of FIG. 16.

FIGS. 21A-21D are side views of several embodiments of pushers that maybe used with various embodiments of the ELO apparatus of the presentinvention.

FIGS. 22A-22C are side views of the pusher of FIG. 21A, showing variousphysical positions between the pusher, the tape and the substrate.

FIG. 23 is a flow chart illustrating one embodiment of a method forforming ELO products that may be performed by the apparatus of FIG. 3A.

FIG. 24 is a flow chart illustrating one embodiment of a batch ELOmethod that may be performed by the apparatus of FIGS. 11-15E.

FIG. 25 is a flow chart illustrating another embodiment of a batch ELOmethod that may be performed by the apparatus of FIGS. 16-20D.

DETAILED DESCRIPTION

Reference will now be made in more detail to preferred embodiments,examples of which are illustrated in the accompanying drawings. Whilethe invention will be described in conjunction with these embodiments,it will be understood that they are not intended to limit the inventionto these embodiments. On the contrary, the invention is intended tocover alternatives, modifications and equivalents, which may be includedwithin the spirit of the appended claims. Furthermore, in the followingdetailed description, numerous specific details are set forth in orderto provide an understanding to one of ordinary skill in the art.However, one ordinarily skilled in the art will understand that thepresent invention may be practiced without these specific details. Insome instances, other embodiments, methods, procedures, components, andcircuits have not been described in detail as not to unnecessarilyobscure aspects of the current invention.

The following descriptions are explained in many instances with respectto epitaxial lift off (ELO) thin film devices with support structuresand methods used to form such devices and support structures. It isappreciated that the present invention is not limited to suchembodiments and can be utilized in a variety of other configurations andapplications. It is appreciated that various items may be referred towith a modifier “epitaxial” (e.g., epitaxial film stack, epitaxial liftoff layer, etc.) and that in addition to epitaxially grown portions theitem may include components or portions that were not necessarilyepitaxially grown (e.g., adhesive layer, support structure, etc.). It isalso appreciated that terms such as comprising, including, containing,and so on are inclusive and open ended and do not exclude additionalelements or process operations, whether recited or un-recited.

Some of the present epitaxial lift off fabrication systems and methodsinvolve manipulating (e.g., adjusting, bending, peeling, etc) a portionof a wafer during epitaxial lift off to facilitate decoupling orseparation of a lift off component from a substrate. In one embodiment,a force or tension is applied to a portion of a wafer or componentscoupled to the wafer. It is appreciated the force can impart variouseffects or have various impacts on components of the wafer during anepitaxial lift off process. The force(s) can be utilized to facilitateetchant exposure or access to an etch face. The force(s) can also beutilized to facilitate mitigation of potential detrimental impacts(e.g., cracking, breaking, etc.) associated with final separation. Manyof the present described embodiments generally relate to fabrication ofa variety of apparatuses (e.g., including photovoltaic devices, solarconversion devices, solar cell devices, opto-electric devices, opticaldevices, photonic devices, mechanical devices, semiconductor devices,electronic thin film devices, other thin film devices, etc.).

FIG. 1A is a block diagram of an exemplary lift off separation system120 in accordance with one embodiment of the present invention. Aportion of a wafer 100 (e.g., including an epitaxial lift off component110 attached to growth substrate 102 by sacrificial layer 104, etc.) isforwarded to lift off separation system 120 which outputs epitaxial liftoff component 110 decoupled or separated from growth substrate 102.Wafer 100 is forwarded to lift off separation system 120 and is coupled(e.g., bonded. laminated, etc.) to tape 119. The wafer 100 istransported with tape 119 though the lift off separation system 120which etches the sacrificial layer and decouples or separates growthsubstrate 102 from the epitaxial lift off component 110. In oneembodiment the epitaxial lift off component 110 includes a tapetensioner that engages the tape and pulls or lifts the tape away fromthe growth substrate 102.

During the decoupling or separation, lift off separation system 120manipulates (e.g., bends, peels, etc.) epitaxial lift off component 110to facilitate or assist separation of the epitaxial lift off component110 from the growth substrate 102. In one embodiment, the manipulation(e.g., application of force(s), introduction of tension(s), etc.) iscontrolled to facilitate exposure of an etchant to an etch face of thesacrificial etch layer. In one exemplary implementation, themanipulation includes applying a force to increase a gap distancebetween portions of the lift off component 110 and growth substrate 102prior to final separation. The manipulation can also be controlled tofacilitate mitigation of adverse impacts associated with finalseparation of the lift off component 110 from the growth substrate 102.Additional information describing various exemplary manipulations of thelift off component during etching is set forth in following sections ofthe detailed description. It is appreciated that the epitaxial lift offseparation component 120 can be implemented in a variety ofconfigurations (e.g., apparatus 300, apparatus 400, apparatus 1100,apparatus 1600, etc.). In one embodiment, the epitaxial lift offcomponent 110 includes a tape tensioner that engages the tape and pullsor lifts the tape away from the growth substrate 102.

It is appreciated that epitaxial lift off component 110 can have avariety of configurations and features. Epitaxial lift off component 110can include a variety of layers and structures. The epitaxial lift offcomponent 110 can include portions of a thin film epitaxial lift offstack. FIG. 1B is a block diagram of an exemplary implementation ofepitaxial lift off component 110 including a device structure 111 andoptional support structure 115 in accordance with one embodiment of thepresent invention. Lift off component 110 can also include an adhesivelayer or structure to assist coupling the device structure 111 tosupport structure 115. Device structure 111 can include various devicecomponents (e.g., active devices, passive devices, photo-electricdiodes, transistors, etc.). Support structure 115 can supplement variousfeatures and characteristics of lift off component 110. Supportstructure 115 can supplement structural and mechanical integrity of thedevice structure 111 (e.g., enhance ability to avoid or withstandadverse impacts associated with cracking propagation, handling tension,bending radius, bending forces, etc.). Support structure 115 can alsosupplement functional operations of the device structure (e.g. reflectlight towards device structure 111, conduct heat from device structure111, conduct electricity from device structure 111, etc.). Additionalinformation describing lift off component configurations and features isset forth in following sections of the detailed description.

FIG. 1C is a block diagram of an exemplary lift off separation system inaccordance with one embodiment of the present invention. The lift offseparation system includes etchant well 130 and separation assistancecomponent 140. The components of the lift off separation systemcooperatively operate to facilitate decoupling or separation of lift offcomponent 110 from substrate 102. In one embodiment, an etchant etchesaway sacrificial layer 104. FIG. 1D is a block diagram of an exemplarylift off separation system as the sacrificial layer 104 is being etchedaway in accordance with one embodiment of the present invention. Etchantwell 130 holds the etchant while separation assistance component 140applies forces that facilitate both etchant front exposure and finalseparation of the lift off component 110 from substrate 102. In oneembodiment, the force(s) help to gradually widen gaps 198 and 199 andallow etchant to more easily reach the etchant fronts (e.g., 188 and189). Allowing etchant to more easily reach the etch front canfacilitate a number of benefits (e.g., reducing the overall amount ofetchant, expediting the separation, etc.). In one embodiment, separationassistance component 140 is included in a tape tensioner.

It is appreciated that separation assistance component 140 can include avariety of configurations (e.g., similar to components of apparatus 300,apparatus 400, apparatus 1100, apparatus 1600, etc) and can applyvarious forces to facilitate etchant front exposure and separation. Forexample, separation assistance component 140 can apply forces bypushing, pulling and combinations of pushing and pulling. In oneembodiment the, forces are applied by components or members ofseparation assistance component 140 to tape 119 which in turn impactsthe lift off component 110. In one embodiment, component or member 148and 149 exert an upward force on portions of tape 119 while component ormember 147 exerts a downward force on another portion of tape 119. Inone exemplary implementation, the upward forces cause tape 119 to “pull”or “peel” outer edge portions of lift off component 110 up to create awider gap 198 and 199 while the downward force exerted by component ormember 147 helps hold a portion of lift off component 110 from adversely“snapping” off from remaining portions of sacrificial layer 104. In oneexemplary implementation, member 147 allowing for a more gradual andregulated final separation. It also is appreciated that etchant well 130can include a variety of configurations for holding the etchant andsubstrates (e.g., similar to components of apparatus 300, apparatus 400,apparatus 1100, apparatus 1600, etc).

FIG. 1E is a block diagram of an exemplary lift off separation systemafter sacrificial layer 104 is etched away in accordance with oneembodiment of the present invention. In one embodiment, the componentsor members 148 and 149 stop “actively” applying a dynamic force to thetape 119 and the previously downward force exerted by component ofmember 147 is gradually decreased. The force(s) exerted by separationcomponent 140 can be controlled to facilitate progression to anexemplary “separated” “un-bent” configuration for lift off component 110as shown in FIG. 1F in accordance with one embodiment of the presentinvention.

FIGS. 2A through 2F depict various aspects of transferring the lift offcomponent 110 (e.g., epitaxial material, etc.) from the substrate 102 toa tape on a roll, according to embodiments of the invention. FIG. 2A isa side view and FIG. 2B is a bottom view of an assembly 200 thatincludes a plurality (six shown) of the wafers (e.g., similar to a wafershown in FIGS. 1A and 1B) attached to a tape 202. Each of the wafers caninclude a sacrificial layer 104 disposed on or over a substrate 102 andan epitaxial material layer or lift off component 110 disposed on orover the sacrificial layer 104. Above epitaxial material layers or liftoff component 110, adhesive layers 204 may be included to adhere thewafers to the tape 202. The adhesive layer 204 can include a variety ofconfigurations and features. The adhesive layers 204 may be made of apressure sensitive adhesive, a hot melt adhesive, an ultraviolet (UV)curing adhesive, a natural adhesive, a synthetic adhesive, derivativesthereof, or combinations thereof. In one embodiment the material of theadhesive layers 204 is resistant to the etchant used in the etchantprocess as described below.

In one embodiment, the tape 202 is an elongated thin strip of material,similar in structure to photographic film. The material of tape 202, insome embodiments, includes plastic or polymeric materials. The tape 202may have a width W₁ that is between about 10 mm and about 1000 mm, inone embodiment. In one embodiment, the overall length (not shown) of thetape 202 corresponds to the size of the storage rolls or reels that thetape 202 is wound upon. In one embodiment, the length of the tape 202 isbetween about 1 m and about 1000 m. Each wafer may have a length L₁ inthe longitudinal direction of the tape 202 and a width W₂, traverse tothe tape 202. In one embodiment, L₁ is between about 8 mm and about 950mm, while W₂ is between about 8 mm and about 950 mm. The substrates 100,in one embodiment, are substantially centered on the tape, and spacedapproximately a distance D₁ from each other. In one embodiment, D₁ isbetween about 2 mm and about 20 mm.

The tape 202 may optionally include openings 206 along the sides of thetape 202 for engagement by drive elements and tensioning elements asdescribed below with respect to various embodiments of the apparatus ofthe invention. In addition, the tape 202 may include regularly spacedslots 208, in some embodiments, to provide a greater degree offlexibility in the transverse direction, as required. The slots 208 aregenerally centered between two adjacent substrates or wafers 100, and inone embodiment have a width W₃ that is between about 0.5 mm and about 2mm. In one embodiment, the slots 208 are located between substrates orwafers 100 such that between about 2 substrates and about 5 substratesare between adjacent slots 208. Further, in some embodiments, the slots208 extend between about 25% and about 90% to the center of the tape202. For example, for tapes having a width W₁ of about 20 mm, and slots208 that extend for about 7 mm each, then each slot 208 would extendabout 70% to the center of the tape 202, leaving a connecting edge ofabout 6 mm between the slots 208. Also, in some embodiments, the tape202 may include indexing holes 203 located between adjacent substrates100, for handling purposes, as is more fully described below.

In FIG. 2C, a side view of an assembly 210 is shown that includes aplurality (six shown) of the epitaxial material layers or lift offcomponents 110 of FIG. 2A, attached to the tape substrate 202 by theadhesive layers 204. In some embodiments, the assembly 210 is formed byexposing the sacrificial layer 104 in the assembly 200 of FIGS. 2A and2B to a wet etch solution during an ELO etching process. In someexamples, the wet etch solution contains hydrofluoric acid and maycontain a surfactant, a buffer, a corrosion inhibitor, combinationsthereof, etc. It is appreciated that various etch rates (e.g., foretching the sacrificial layer, etc.) can be achieved (e.g., sacrificiallayer 104 may be etched at a rate of about 0.3 mm/hr, at about 5 mm/hr,at about 10 mm/hr at about 50 mm/hr, at rates between these values, atrates greater than 50 mm/hr, etc.) utilizing a present support structureto facilitate control of the etch rate.

It is appreciated that various etching processes can be utilized. In analternative embodiment, sacrificial layer 104 may be exposed to anelectrochemical etch during the ELO etching process. The electrochemicaletch may be a biased process or a galvanic process. Also, sacrificiallayer 104 may be exposed to a vapor phase etch during the ELO etchingprocess in another embodiment described herein. The vapor phase etchincludes exposing sacrificial layer 104 to hydrogen fluoride vapor. TheELO etching process may be a photochemical etch, a thermally enhancedetch, a plasma enhanced etch, a stress enhanced etch, derivativesthereof, or combinations thereof.

In FIG. 2E a side view is shown of the assembly 210 of FIG. 2D beingwound on a support roll or reel 212. The assembly 210 includes the tape202 with a plurality of epitaxial material layers or lift off components110 attached or adhered thereto as described above. The assembly 210 isshown being wound around roll 212 with the epitaxial material layers 110attached to the bottom of the tape 202 such that the epitaxial materiallayers 110 are faced toward the surface of the roll 212. In an alternateembodiment, the epitaxial material layers 110 may be above the tape 202such that the epitaxial material layers 110 are faced away from thesurface of the roll 212. A protective film or sheet 214 may be providedto protect the epitaxial material layers 110 from adjacent surfaces. Theroll 212 has a minimum (unloaded) radius of R₁. In one embodiment, theradius R₁ of the roll 212 is between about 10 cm to about 100 cm. Theradius R₁ of the roll 212, is an important design consideration, as theepitaxial material layers 110 may be cracked or otherwise damaged ifthey are subjected to a radius of curvature that is too small. Thus theradius R₁ of the roll 212 is chosen based on the structural limitationsof the epitaxial material layers or lift off component 110 and toprevent cracking and other damage. Once the roll 212 is loaded with anappropriate length of assembly 210, as shown in FIG. 2E, a large numberof epitaxial material layers 110 may be handled, transported, or loadedinto subsequent processing apparatus as an assembly 220.

In one embodiment, an epitaxial lift off system includes a waferreceiving stage wherein the wafer includes a substrate, a sacrificialetch layer and epitaxial lift off component; a tape coupling applicationstage, wherein the epitaxial lift off component is coupled to a tape; anetching stage wherein the lift off component is manipulated to assistetchant exposure to an etch face of the sacrificial etch layer and aidseparation of the epitaxial lift off component from the substrate. Theepitaxial liftoff system can also include, a clean and rinse stagewherein the epitaxial lift off component and the tape are cleaned andrinsed. In one embodiment, there is a tape receiving stage configure toreceive the tape and the tape is prepared for participating in furtherportions of the epitaxial lift off.

FIG. 3A is a schematic plan view of one embodiment of an apparatus 300that is useful for performing a method of forming tape based ELOproducts. In one embodiment, apparatus 300 is included in a lift offseparation system. At a first end 350 of the apparatus 300, a firstsection 302 includes one or more reels or rolls 354 containing one ormore blank or unloaded tapes 352. While six parallel tapes 352 areshown, it is appreciated that there may be more or less number of tapes352 loaded on one or more rolls 354. In step 2302 of method 2300, theunloaded tapes 352 are unwound from the roll 354, and the unloaded tapes352 are fed from the roll 354 into a splice/punch section 304. In step2304 and in one exemplary implementation of the splice/punch section304, the unloaded tapes 352 are cut, punched, or a combination of cutand punched to form openings in the tape for handling and otherpurposes. In one embodiment, the openings formed in the tapes 352 duringsplice/punch section 304 include openings and slots (e.g., openings 206and the slots 208 as shown in FIG. 2B, etc.). In another otherembodiment, the splice/punch section 304 may be omitted from apparatus300 (e.g., the tape is forwarded without openings and slots in the tape,openings can be punched in a separate operation outside of apparatus 300or before the tape is rolled unto rolls 354, etc.).

In step 2306 of method 2300, wafers are laminated onto the unloadedtapes. As shown in FIG. 3A, after the splice/punch section 304 (whenprovided) the unloaded tapes 352 enter a lamination section 306. Thelamination section 306, receives wafers 356 from a wafer input section308. In one embodiment, a robot 310 may be used to load the wafers 356into the lamination section 306. In one embodiment, the wafer 356 issimilar to the wafer in FIG. 1A prior to entering lift off separationsystem 120. In the lamination section 306, the wafers are coupled (e.g.,attached, adhered, bonded, etc.) to the respective tapes 352, as shownby wafers 358 coupled (e.g., attached, bonded, etc.) to the wafer loadedtapes 368. It is appreciated wafers 358 can be coupled to the bottom oftapes 368. In one embodiment, the wafer loaded tapes 368 are similar instructure to the assembly as shown in FIGS. 2A and 2B. In oneembodiment, the adhesive 204 is pre-laminated to the tapes 352 ofapproximately the same size as the wafer 358 and a liner is rewound fromthe tape before lamination. In another embodiment, the adhesive 204 isapplied to the tape prior to the splice/punch section 304.

In one embodiment, the loaded tapes 368 enter an accumulation section312 after leaving the lamination section 306 and the loaded tapes 368are accumulated prior to entering the ELO etch section 314, asillustrated by step 2308 of method 2300 in FIG. 23. Accumulation section312 can facilitate mitigation of potential timing issues or problems.Accumulation section 312 can be utilized when the lamination time andthe ELO etch process are asynchronous (e.g., when the lamination processis performed step-wise, and the ELO etch process is continuous, etc).

After the accumulation section 312, the substrate loaded tapes 368 enteran ELO etch section 314. In the ELO etch section 314, the sacrificiallayer (e.g., example layer 104 in FIGS. 1A and 1B, etc.), is etched toremove the sacrificial layer and decouple or separate the substrate fromthe wafer loaded tapes 368, in step 2310 of method 2300. The resultingELO lift off component loaded tapes 364, proceed to tape post etchprocessing sections, while the unloaded or separated substrates 360proceed to substrate post etch processing sections, in step 2312 ofmethod 2300. The separated or unloaded substrates 360 enter a conveyorloading section 316, where the unloaded substrates 360 are placed on aconveyor, for example, by a robot (not shown).

In one embodiment, the substrate post etch processing sections include afirst substrate rinsing section 318, a substrate cleaning section 320, asecond substrate rinsing section 322 and a substrate drying section 324.In one embodiment, the substrate post etch processing sections preparethe substrates to be reused (e.g., in an epitaxial growth process, in apresent ELO lift off process, etc.) by removing contaminates from thesubstrates. In another embodiment, the substrate cleaning process has aseries of more than one cleaning sections and rinsing sections not shownbefore the final drying section 324. A robot 326 can be utilized tounload the substrates from the substrate drying section 324 to asubstrate output section 328. The substrates 362 in the substrate outputsection 328, are ready in one embodiment to have an optional surfacetreatment followed by sacrificial and epitaxial material layersredeposited thereon. In one embodiment, a conveyor (not shown) mayredirect the substrates 362 to a deposition chamber or process. Aftersacrificial and epitaxial material layers are deposited on thesubstrates, the resulting wafers (e.g., including the substrates, etc.)may be further conveyed to substrate input section 308 as wafers 356, tobe reused in the process. In this manner, the relatively expensivesubstrates may be used multiple times to grow epitaxial layers.

After removal of the sacrificial layer and the substrate in from the ELOlift off component loaded tapes 368 proceed to tape post etch processingsections. In one embodiment, the tape post etch processing sectionsinclude a first tape rinsing section 330, a tape cleaning section 332, asecond tape rinsing section 334 and a tape drying section 336. Inanother embodiment, the tape cleaning process has a series of more thanone cleaning section(s) and rinsing section(s) not shown before thefinal drying section 336. In further embodiments, a large length of tapeis loaded into a single tank which is sequentially filled and drainedwith cleaning chemical and rinse water, followed by a final dry. In oneembodiment, the ELO lift off component loaded tapes are similar to theassembly 210 as shown in FIG. 2C. The tape post etch processing sectionsare designed to clean and dry the ELO loaded tapes 364 to removecontaminates from the tape and epitaxial material loaded thereon. Whilethe plurality of tapes are shown in a horizontal plane, it isappreciated that a plurality of tapes and epitaxial lift off sectionscould also be configured in a vertical plane.

After the ELO loaded tapes 364 have been cleaned and dried, they proceedto a tape winding section 338 located at a second end 370 of theapparatus 300. In the tape winding section 338 the ELO lift offcomponent loaded tapes 364 are wound onto one or more reels or rolls366, such as shown in FIG. 2D and in step 2314 of method 2300. Once theroll 366 is fully loaded, the loaded roll is removed from the tapewinding section 338 and is replaced by an empty roll ready to receiveELO lift off component loaded tapes.

FIG. 3B is a flow chart of epitaxial lift off method 300 in accordancewith one embodiment of the present invention. In block 310 a wafer isreceived. The wafer includes a substrate, a sacrificial etch layer andan epitaxial lift off component. In block 320, the wafer is coupled to atape. In block 330, the sacrificial layer is exposed to an etchant. Inblock 340, the epitaxial lift off component is manipulated while thesacrificial layer is exposed to the etchant, wherein the manipulating iscontrolled to assist separation of the epitaxial lift off component fromthe substrate prior to final separation of the lift off component andthe substrate. In one embodiment, the manipulation is controlled tofacilitate exposure of the etchant to an etch face of the sacrificialetch layer. The manipulation can also be controlled to facilitatemitigation of adverse impacts associated with cracking. In one exemplaryimplementation, the manipulation is controlled to facilitate mitigationof adverse impacts associated with final separation of the epitaxiallift off component from the substrate. In one embodiment, themanipulating includes causing a force to be applied to a portion of theepitaxial lift off component, wherein the force facilitates widening ofa gap between the epitaxial lift off component and the substrate.

FIGS. 4 through 6 depict an exemplary belt and chain apparatus 400utilized in performing etching to decouple or separate lift offcomponents from substrates in accordance with one embodiment. In oneembodiment, the process is considered a continuous ELO etch process(e.g., tape and epitaxial layers are continuously removed from thesubstrates as they proceed through a portion of the etching section,etc). It should be understood that portions of the apparatus 400 havebeen removed in FIGS. 4-6, for clarity. FIG. 4 is a block diagramoverhead view of exemplary belt and chain apparatus 400 in accordancewith one embodiment of the present invention. The apparatus 400 includesa tape and substrate loading section 402, an etching section 404, drivepulleys 410, rotatable point load 412, a substrate unload section 406and a tape unload section 408. FIG. 5 shows a closer overhead view of aportion of exemplary etching section 404 including the chain drive 502and guide rails 504 of the apparatus 400.

FIG. 6 is a component view block diagram of portions of exemplary beltand chain apparatus 400 in accordance with one embodiment of the presentinvention. The tape 202 includes a plurality of openings or slots 206along its sides, similar to those shown in FIG. 2B. The chain drive 502includes a plurality of drive pins 602 that engage the tape 202 in theslots 206. The chain drive 502 drives the tape through the etchingsection 404, while also maintaining the lateral position of the sides ofthe tape 202 by engaging the outside portion of the slots 206, asdiscussed in detail below. The chain drive 502 is driven by drivepulleys 410 which in turn are driven by drive shafts and a motor (notshown). Chain drive 502 also includes a plurality of cross members 506that include pins 604 that engage holes 606 to connect the links 612 ofthe chain drive 502 together. Each link 612 of the chain drive 502includes a rotatable point load 412. Each point load 412, includes pins608 that engage holes (not shown) in the links 612 of the chain drive502. The point loads 412 rotate about pins 608 and apply pressure to thesubstrates 102, as described in greater detail below. The point loads412 may apply the pressure to the substrates 102 by their weight alone,or they may be acted upon by a cam (not shown). The guide rails 504 eachinclude a drive link ramp 624 having an elongated slot 610 formedtherein. The pins 602 engage in the elongated slots 610 to therebypositively lock the pins 602 into the slots 206 of the tape 202. Thedrive link ramps 624 each have an increasing height from the tape andsubstrate loading section 402 through the etching section 404, fortensioning the tape as is further described below.

Below the chain drive 502, the apparatus 400 includes a substratesupport in the form of a substrate handling belt 614. The belt 614includes a plurality of substrate pockets 616 similar to substratepocket 1306 in FIG. 13. The substrate pockets 616 are sized to receiveone substrate 102 each. The substrate pockets 616 are filled withetchant by an etchant delivery device 618, that sprays or drips etchantinto the substrate pockets 616. The etchant delivery device 618 isprovided etchant by a pump (not shown) that pumps etchant from anetchant sump (not shown) in the bottom of apparatus 400. The substratehandling belt 614 also includes a plurality of indexing pins 620 locatedon each side of each substrate pocket 616. The indexing pins 620 engageindexing holes 203 in tape 202 to thereby maintain the substrates 102 inthe substrate pockets 616. The cross members 506 of the chain drive 502may include blind bores 622 (one shown in FIG. 6), for receivingindexing pins 620 to further lock pins 620 into indexing holes 203. Thesubstrate handling belt 614 and is mounted on at least two belt rollers(see FIG. 10 below). The operation of apparatus 400 is described belowwith respect to FIG. 10 and FIGS. 10A-10G.

FIG. 7 is an isometric view of one embodiment of a tape and substratetank entry assembly 700 for use in the tape and substrate loadingsection 402, (see FIG. 4), of various embodiments of the ELO processapparatus of the invention. The tape and substrate tank entry assembly700, includes a tape and substrate guiding block 702. While in thisembodiment, the tape and substrate guiding block 702 has four tapeengaging sides 704, other numbers of sides may be used. Each tapeengaging side 704 includes a plurality of pins 706 for engaging theslots 206 in the tape 202. The tape and substrate guiding block 702rotates about a shaft (not shown) that extends through a centrallylocated hole 708. A shaft support plate 710 is provided on oppositesides of the tape and substrate guiding block 702, for supporting andguiding the shaft. A slot 712 is provided in each shaft support plate710, and allows the shaft to oscillate as the tape and substrate guidingblock 702 rotates. The tape and substrate guiding block 702 includesguiding pins 714 on each corner of the sides through which the hole 708extends. The guiding pins 714 engage sides 716 of the shaft supportplates 710, so that each corner of the substrate guiding block 702travels substantially vertically down into the etch bath, beforetraveling horizontally. The combined interaction of these elements,provides a planar support for each substrate 102 on a side 704 of thesubstrate guiding block 702 to decrease the likelihood that the tape 202is torn or otherwise removed from the substrates 102 prior to enteringthe etch bath 404. By supporting the substrates 102 in this fashion, thechance of the ELO stack being damaged is reduced as the tape andsubstrate assembly enters the etch bath 404.

In FIG. 8, an embodiment of a tape extraction assembly 800 is shown foruse in the tape unload section 408 of the various ELO processapparatuses. The tape 202 includes the ELO stacks (not shown) that havebeen removed from the substrates 102 in the etch bath 404 as previouslydescribed. The tape extraction assembly 800 includes a tape engagingdrum or roller 802 that rotates about a support shaft 804. The drum 802includes a plurality of pins 806 that engage the slots 206 in the tape202. The radius R₂ of the drum 802 is of a sufficient size to avoiddamaging the ELO stacks on the tape 202, as described above with respectto R₁ of FIG. 2D. In one embodiment, after disengaging from the drum802, the tape 202 with the ELO stacks thereon, proceeds to the tape postetch processing sections of apparatus 300 as described above.

In some cases, the substrates 102 may not be fully removed from the tape102 in the etch bath, due to multiple processing variables. FIG. 9depicts a positive substrate detachment assembly 900, which may be usedwith the various embodiments of the ELO process apparatuses. Thepositive substrate detachment assembly 900 includes a substrate engagingbar 902 that contacts the leading edge 904 of any substrates 102remaining on the tape 202 once the tape 202 reaches the drum 802. As thetape 202 is driven around the drum 802 by pins 806, the substrateengaging bar 902 peels the substrate 102 from the tape 202. While thisaction may damage the ELO stack 110 associated with the substrate 102,the positive substrate detachment assembly 900 avoids tearing of thetape requiring manual intervention by technicians, thereby decreasingdowntime and increasing product throughput.

FIG. 10 is a side view of apparatus 400 as shown in FIGS. 4-6. Portionsof the apparatus 400 have been omitted from FIG. 10 for clarity. Inaddition to the features of apparatus 400 that are common to FIGS. 4-6,FIG. 10 also shows two belt rollers 1002 for operating on (e.g.,supporting, driving, etc.) substrate handling belt 614, althoughadditional rollers may be provided intermediate the two belt rollers1002 shown in FIG. 10. The belt rollers 1002 may be driven by a drivesystem including a motor (not shown), that is synchronized to drive thesubstrate handling belt 614 at the same speed as drive chain 502.Alternatively, the belt rollers 1002 may be freewheeling, and substratehandling belt 614, may be driven by chain drive 502 as the blind bores622 engage indexing pins 620 (as shown and described above withreference to FIG. 6). In the tape engaging drum or roller 802 is alsoshown in FIG. 10 in relation to apparatus 400.

FIG. 10A is a cross-section taken through section line 10A-10A in FIG.10. In this portion of apparatus 400, the tape and substrate assembly isleaving the tape and substrate loading section 402 and entering theetching section 404. The point load 412 has been omitted from FIG. 10Afor clarity. The drive link ramps 624 are at their lowest level, asindicated by H₁. The drive links 612 are above the drive link ramps 624,such that pins 602 have not entered slots 610, and the point load 412(not shown) has not yet contacted the tape 202. The tape 202 is not yetunder tension and is in a substantially planar orientation. A substrate102 is shown positioned within a substrate pocket 616, that has beenpreviously filled with etchant by the etchant delivery device 618 (seeFIG. 6). A bed 1004 supports guide rails 504 and the substrate handlingbelt 614. In one embodiment a heater 1006 is mounted below the bed 1004and heats the bed 1004, as well as the etchant in the substrate pocket616. The etching process may be accelerated by heating the etchant.

FIG. 10B is a cross-section taken through section line 10B-10B in FIG.10. In this portion of apparatus 400, the tape and substrate assemblyhas advanced further into the etching section 404. The drive links 612are supported on the drive link ramps 624, such that pins 602 are fullyengaged in the slots 610, and the point load 412 is in contact with theapproximate center of the tape 202. By contacting the center of the tape202, the point load 412 maintains the substrate 102 in the substratepocket 616. The drive link ramps 624 have increased in height, asindicated by H₂. The tape 202 is coming under tension and is no longerin a planar orientation. The pins 602 extend through the drive holes 206of the tape 202, to maintain the sides of the tape 202 in position. Inthis position in apparatus 400, while the tape 202 is under tension, thesubstrate 102 has not yet begun to be released from the tape 202.

FIG. 10C is a cross-section taken through section line 10C-10C in FIG.10. In this portion of apparatus 400, the tape and substrate assemblyhas advanced even further into the etching section 404. The drive links612 are supported on the drive link ramps 624, such that pins 602 arefully engaged in the slots 610, and the point load 412 is in contactwith the approximate center of the tape 202. The point load 412continues to maintain the substrate 102 in the substrate pocket 616. Thedrive link ramps 624 have increased further in height, as indicated byH₃. The tape 202 is under increased tension as the pins 602 continue tomaintain the sides of the tape 202 in position. In this position inapparatus 400, the increased tension placed on the tape 202 forms acrevice 1008 between the sides of the substrate 102 and the sides of thetape 202, such that the sides of the substrate 102 have started to bereleased from the tape 202.

FIG. 10D is a cross-section taken through section line 10D-10D in FIG.10. In this portion of apparatus 400, the tape and substrate assemblyhas advanced yet further into the etching section 404. The drive links612 are supported on the drive link ramps 624, such that pins 602 arefully engaged in the slots 610, and the point load 412 is in contactwith the approximate center of the tape 202. The point load 412continues to maintain the substrate 102 in the substrate pocket 616. Thedrive link ramps 624 have increased further in height, as indicated byH₄. The tape 202 is under further increased tension as the pins 602continue to maintain the sides of the tape 202 in position. In thisposition in apparatus 400, the further increased tension placed on thetape 202 increases the size of the crevice 1008 between the sides of thesubstrate 102 and the sides of the tape 202, such that the sides of thesubstrate 102 are further released from the tape 202.

FIG. 10E is a cross-section taken through section line 10E-10E in FIG.10. In this portion of apparatus 400, the tape 202 and substrate 102have advanced further into the etching section 404. The drive links 612are supported on the drive link ramps 624, such that pins 602 are fullyengaged in the slots 610, and the point load 412 is in contact with theapproximate center of the tape 202. The drive link ramps 624 haveincreased further in height to their maximum, as indicated by H₅. Thepins 602 continue to maintain the sides of the tape 202 in position. Inthis position in apparatus 400, the substrate 102 has been completelyreleased from the tape 202. The point load of 412 no longer appliespressure to the substrate 102. The substrate 102 may be maintained inthe substrate pocket 616 by gravity.

FIG. 10F is a cross-section taken through section line 10E-10F in FIG.10. In this portion of apparatus 400, the tape 202 and substrate 102 arebeginning to exit the etching section 404. The drive links 612 aresupported on the drive link ramps 624, such that pins 602 are fullyengaged in the slots 610. The drive link ramps 624 have maintained theirheight, as indicated by H₅. The pins 602 continue to maintain the sidesof the tape 202 in position. In this position in apparatus 400, thepoint load 412 is starting to retract and no longer contacts the tape202, thereby allowing the tension in the tape 202 to decrease. Inembodiments where the point loads 412 are not cam operated, but actunder their weight alone, the point load may still be contacted andsupported by the tape 202. The substrate 102 is maintained in thesubstrate pocket 616 as both exit the etching section 404.

FIG. 10G is a cross-section taken through section line 10G-10G in FIG.10. In this portion of apparatus 400, the tape 202 and substrate 102have exited the etching section 404. The drive links 612 have retractedsuch that they no longer contact the drive link ramps 624, and the pins602 have exited the slots 610. The drive link ramps 624 have maintainedtheir height, as indicated by H₅. The pins 602 are no longer needed tomaintain the sides of the tape 202 in position, as the tape 202 is nolonger in tension and has resumed its original planar configuration. Thetape 202 proceeds to the tape unload section 408 and the substrate 102is maintained in the substrate pocket 616 and proceeds to the substrateunload section 406.

The right-hand side of FIG. 10 illustrates how the tape 202 proceeds, insome embodiments, to tape post etch processing sections, such as thoseshown in FIG. 3A. The substrates 102 proceed, in some embodiments, tosubstrate post etch processing sections also as shown in FIG. 3A. Theetchant remaining in the substrate pocket 616 may be dumped into a sump(not shown) as the substrate handling belt 614 proceeds around roller1002 on the right-hand side of FIG. 10. In some embodiments, the etchantmay proceed to an etchant processing section such as a filter, prior tobeing returned to the sump. In some embodiments, a sump may not be used,and fresh etchant is supplied to the substrate pockets 616. In theseembodiments, the used etchant may be collected for cleaning or disposal.

FIGS. 11-13 depict an apparatus 1100 for performing a batch ELO etchprocess to remove ELO stacks from support substrates, as described inone embodiment herein. It should be understood that portions of theapparatus 1100 have been removed in FIGS. 11-13, for clarity. Theapparatus 1100 includes a tape and substrate loading section 1102 (e.g.,at first end 350, etc), an etching section 1104, a substrate unloadsection 1106 and a tape unload section 1108 (e.g., at second end 370,etc.). The batch process of apparatus 1100 includes loading a length(batch) of the tape and substrate assembly into the etching section1104, removing the substrates 102 from the section of tape 202 and thenunloading the separated tape 202 and substrates 102 from the firstlength while loading the next length of tape and substrate assembly intothe etching section 1104. The length or batch of the tape and substrateassembly may include as little as one substrate, or may include 5, 10 oreven more substrates per batch loaded into the etching section 1104 at atime. This process is described in detail below with respect to FIGS.14, 15A-15E, and 24.

FIG. 12 shows an overhead view of a portion of the etching section 1104including the pin rails 1110 and side rails 1204 of the apparatus 1100.The tape 202 includes a plurality of openings or slots 206 along itssides, similar to those shown in FIG. 2B. The pin rails 1110 include aplurality of index pins 1202 that engage the tape 202 in the slots 206.The tape engaging drum 802 drives the tape into and out of the etchingsection 1104, by engaging the slots 206 in the tape 202. Guide rails1312 each included a slot 1318 that receives a side of the tape 202. Theguide rails 1312 also include a plurality of index pin receiving holes1316 through which the index pins 1202 extend. The apparatus 1100includes sidewalls 1204.

FIG. 13 depicts an exploded view of apparatus 1100. As previouslyindicated portions of apparatus 1100 are omitted from FIG. 13 forclarity. Apparatus 1100 has a conveyor belt 1302 which containssubstrate pockets 1306. The substrate pockets 1306 are each sized toaccept a single substrate therein. The substrate pockets 1306 are filledwith etchant by an etchant delivery device 1314, that sprays or dripsetchant into the substrate pockets 1314. The etchant delivery device1314 is provided etchant by a pump (not shown) that pumps etchant froman etchant sump (not shown) in the bottom of apparatus 1100. Thesubstrate handling belt 1302 also includes a plurality of drive pins1304 located on each side of each substrate pocket 1306. The drive pins1304 engage indexing holes 203 in tape 202 to thereby maintain thesubstrates 102 in the substrate pockets 1306. Once the substrates 102have been released from the tape 202, they remain in the substratepockets 1306 to be conveyed out of apparatus 1100, by the conveyor belt1302 through substrate unload section 1106. To provide the requireddownward force on the tape 202 and substrates 102, apparatus 1100includes a weight bar 1112. The weight bar 1112 is generally formed inthe shape of an “H,” including an elongated longitudinal member 1320 andshorter transverse members 1322 formed on the ends of thereof. Theweight bar 1112 provides the required deflection of the tape 202 toremove the substrates at 102 from the tape 202 in the etching section1104, as shown at 1308. The operation of apparatus 1100, and the variouscomponents thereof, will now be described with respect to FIGS. 14 and15A-15E.

FIG. 14 shows a side view of apparatus 1100, with some of the componentsshown as transparent, and some of the components removed for clarity.FIG. 14 also includes section line 15-15 through the etching section1104. FIGS. 15A-15E show the components of the etching section 1104 inthe various stages of removing the substrates 102 from the tape 202.FIG. 15A shows the various components of apparatus 1100 in theirposition when the tape and substrate assembly is initially loaded intothe etching section 1104. FIG. 15 A also shows sidewalls 1204 connectedby the bed 1504 of apparatus 1100. In the initial position, the guiderails 1312 are in contact with the bed 1504. The tape 202 has beenguided such that the sides of the tape 202 are in slots 1318 of theguide rails 1312. The pin rails 1110 are in a raised position such thatthe index pins 1202 are in the index pin receiving holes 1316, but havenot entered slots 206 of tape 202. The substrates 102 are in thesubstrate pockets 1306 of the conveyor belt 1302, and the substratepockets have been previously filled with etchant by the etchant deliverydevice 1314 (see FIG. 13). The tape 202 is in a relatively planarconfiguration and is still in full contact with the substrates 102. Theweight bar 1112 is in a raised position and is not in contact with thetape and substrate assembly. FIGS. 15A-15E also illustrate heater 1502which heats bed 1504 and the etchant in substrate pocket 1306 toaccelerate the etching process.

In step 2404 of method 2400, the sides of the tape 202 are locked intoposition. Also in step 2404, the weight bar 1112 is lowered to applyforce to the center of the tape and substrate assembly. Turning to FIG.15B, it can be seen that the weight bar 1112 is in contact with theapproximate center of the tape and substrate assembly. The pin rails1110 are in a lowered position such that the index pins 1202 havefurther entered index pin receiving holes 1316 of the guide rails 1312and extend through slots 206 of tape 202 to lock the sides of the tape202 in position.

Once the sides of the tape 202 are locked into position, the method 2400proceeds to step 2406 where the sides of the tape 202 are raisedrelative to the substrate 102. As can be seen in FIG. 15B the pin rails1110 along with the guide rails 1312 have been raised to a height H₁,lifting the sides of the tape 202 along with them. This action placestension in tape 202, but at this point in the method 2400, the tape 202is still fully engaged with the substrate 102. At step 2408 of method2400, the sides of the tape 202 are further raised to form a crevicebetween the tape 202 and the substrate 102. In FIG. 15C, the pin rails1110 along with the guide rails 1312 have been raised further to anincreased height H₂, lifting the sides of the tape 202 even furtherabove the substrate 102, to thereby form a crevice 1510 between the tape202 and the substrate 102 along the sides of the tape 202.

In step 2410 of method 2400, the sides of the tape 202 are raisedfurther to further increase the crevice between the tape 202 and thesubstrate 102. As is shown in FIG. 15D, the pin rails 1110 along withthe guide rails 1312 have been raised even further to increased heightH₃, lifting the sides of the tape 202 even further above the substrate102, to thereby increase the size of the crevice 1510 between the tape202 and the substrate 102 along the sides of the tape 202.

In step 2412 of method 2400, the substrate 102 is completely releasedfrom the tape 202, the tape 202 having the epitaxial layers remainingthereon. Turning to FIG. 15E, it can be seen that the pin rails 1110along with the guide rails 1312 have been raised even further toincreased height H₄, wherein the tape 202 is no longer in contact withthe substrate 102, and the tape 202 with the epitaxial layers has beenremoved from the substrate 102. The weight bar 1112 has also been raisedto avoid increasing tension in tape 202 which may result in damage tothe epitaxial layers thereon.

In step 2414 of method 2400, the weight bar 1112 is raised to removeforce from the center of the tape 202 in guide rails 1312 or lowered toreturn the tape 202 to its generally planar configuration. Pin rails1110 remain raised such that index pins 1202 do not engage slots 206 intape 202. The method 2400 can then return to step 2402 and the unloadedtape 202 and substrates 102 are unloaded from the etching section 1104as the next length of tape and substrate assembly is loaded into theetching section 1104.

The right-hand side of the FIG. 14 illustrates how the tape 202proceeds, in some embodiments, to tape post etch processing sections,such as those shown in FIG. 3A. In one embodiment, the substrates 102proceed to substrate post etch processing sections also as shown in FIG.3A. The etchant remaining in the substrate pockets 1306 may be dumpedinto a sump (not shown) as the substrate handling belt 1302 proceedsaround roller 1402 on the right-hand side of FIG. 14. In someembodiments, the etchant may proceed to an etchant Processing sectionsuch as a filter, prior to being returned to the sump. In someembodiments, a sump may not be used, and fresh etchant is supplied tothe substrate pockets 1306. In these embodiments, the used etchant maybe collected for cleaning or disposal.

In FIGS. 16-18, a further embodiment of an apparatus 1600 for performinga batch ELO etch process to remove ELO stacks from support substrates inbatches, is shown. It should be understood that portions of theapparatus 1600 have been removed in FIGS. 16-18, for clarity. Theapparatus 1600 includes a tape and substrate loading section 1602, anetching section 1604, a substrate unload section 1606, and a tape unloadsection 1608. The batch process of apparatus 1600 includes loading alength of the tape and substrate assembly into the etching section 1604,removing the substrates 102 from the section of tape 202 and thenunloading the separated tape 202 and substrates 102 from the firstlength while loading the next length of tape and substrate assembly intothe etching section 1604. This process is described in detail below withrespect to FIGS. 19, 20A-20D, and 25.

FIG. 16 shows an isometric view of apparatus 1600, with the apparatus1600 having been split out longitudinally such that only half of theapparatus 1600 is illustrated. As shown in FIG. 16, apparatus 1600includes a housing 1618 and a chamber lid 1620 mounted on top of thehousing 1618. The housing 1618 encloses a tape and substrate releasemechanism that includes a lift rail 1614, a tensioning pin rail 1616 andpoint load rail 1612. A tape and substrate release mechanism actuator1610 is mounted on top of the chamber lid 1620, and is supported by acylinder support bracket 1626. The tape and substrate release mechanismactuator 1610, includes a number of actuator cylinders including a pincylinder 1622, as shown in FIG. 16. Also shown in FIG. 16, is a tapeengaging to drum 802 that includes pins 806 that engage the slots 206 inthe tape 202, to advance the tape 202 through apparatus 1600. A seriesof rollers 1628 support the substrates 102 from below.

FIG. 17 illustrates an isometric view of apparatus 1600 is shown fromthe tape and substrate loading section 1602 end of the apparatus 1600.The series of rollers 1628 are each supported on a roller driveshaft1704. Each roller driveshaft 1704 extends through a drive shaft bore1736 in a bottom housing 1702 of the apparatus 1600 and through afurther drive shaft bore 1734 in housing wall 1718. A driven miter gear1706 is mounted on the end of each roller driveshaft 1704. The drivenmiter gears 1706 are driven by driving miter gears 1708 that are mountedon and driven by gear driveshaft 1710. The driveshaft 1710 is driven byan electric motor (not shown), and in one embodiment may be synchronizedwith the driving mechanism for tape engaging drum 802 (also not Shown).

FIG. 17 also shows further details of the tape and substrate releasemechanism. The lift rails 1614 include tape supports 1720 attached tothe bottom thereof. The tape supports 1720 include tape receiving slots1722 through which the sides of the tape 202 are guided. The two liftrails 1614 are connected to each other by two support bars 1730 (oneshown in FIG. 17) to maintain the spacing there between. The tensioningpin rail 1616 includes a plurality of tensioning pins 1724 that extendthrough tensioning pin bores 1726 in the tape Support 1720 for engagingthe slots 206 in tape 202 as is described in further detail below. Thepoint load rail 1612 includes a number of point loads 1728 mounted tothe bottom thereof. The point loads 1728 are spaced along the bottom ofthe point load rail 1612 at an interval that is equal to the distancebetween the centers of the substrates 102, such that each point load1728 applies pressure to the center of a substrate 102. The point loadrail 1612 also includes grooves 1732 through which support bars 1730extends. The grooves 1732 and support bars 1730 interact such that thepoint load rail 1612 is maintained in a direction parallel to thelongitudinal direction of apparatus 1600. To provide etchant to theetching section 1604, a plurality of etching spray nozzles 1712 directan etchant spray 1716 toward the substrate and tape assembly Etchant issupplied to the etchant spray nozzles 1712 by an etchant supply conduit1714. The etchant supply conduit 1714 may be connected to the output ofan etchant pump (not shown) that in one embodiment pumps etchant from anetchant sump (also not shown) that is located in the bottom of apparatus1600.

FIG. 18 illustrates a further alternate embodiment of the point loads inaccordance with one embodiment. The point load rail 1612 includes aplurality of arcuate extensions 1802 that function as point loads. Thebottom most point 1804 of extensions 1802 are spaced along the bottom ofthe point load rail 1612 at an interval that is equal to the distancebetween the centers of the substrates 102, such that each bottommostpoint 1804 applies pressure to the center of a substrate 102. FIG. 18also shows a point load mounting hole 1806 that may be used to mountdiscrete point loads (such as point loads 1728 in FIG. 17). The discretepoint loads may be mounted to the point load mounting holes 1806, usinga fastener that extends through the point load mounting holes 1806.

FIG. 19 shows a side cross-sectional view of apparatus 1600, takenthrough the approximate longitudinal centerline of apparatus 1600. Thehousing 1618 is shown to extend for the length of the etching section1604. The housing 1618 includes a chamber lid 1620 bottom housing 1702and housing walls 1718 (see FIG. 17). The housing 1618 forms an interiorvolume 1906 that may be heated to enhance the etching process. Inaddition to those components previously described, FIG. 19 alsoillustrates an optional conveyor belt 1902 that extends above rollers1628 to provide additional support to the tape 202 and substrates 102between the rollers 1628. The conveyor belt 1902 is supported at itsends by conveyor rollers 1904. The conveyor rollers 1904 may optionallybe driven by a motor and associated linkage (not shown), or the conveyorbelt 1902 may be driven by the rollers 1628. FIG. 19 also includessection line 20-20 that extends through the approximate center of thetape and substrate release mechanism actuator 1610. Operation of thetape and substrate release mechanism and the etching process isdescribed below with respect to FIGS. 20A-20D and 25.

FIG. 20A illustrates the components of the tape and substrate releasemechanism in their positions when a length of the tape and substrateassembly is initially loaded into the etching section 1604. FIG. 25shows the steps of one embodiment of a method 2500 of using apparatus1600 to remove the substrates 102 from the tape 202 while maintainingthe epitaxial layers on the tape 202. In step 2502 a length of the tapeand substrate assembly is loaded into the etching section 1604 as shownin FIG. 20A. The tape 202 has been guided such that its sides are in thetape receiving slots 1722 of the tape supports 1720. The lift rails 1614and tape supports 1720 attached thereto are in their lowest positionsuch that tape supports 1720 are in contact with the bottom housing1702. The tape 202 is in a generally planar configuration with little orno tension in the tape 202. The rollers 1628 have been omitted fromFIGS. 20A-20D for clarity. The tensioning pins 1724 as well as the pinrail 1616 are in a raised position such that the tensioning pins 1724have not yet engaged the slots 206 in the tape 202. The point load rail1612 and the point loads 1728 are also in a raised position such thatpoint loads 1728 are not in contact with the tape 202. In addition, atthis stage etchant spray nozzles 1712 have not yet started to supplyetchant to the etching section 1604.

In order to operate the tape and substrate release mechanism the tapeand substrate release mechanism actuator includes a plurality of fluidoperated cylinders. A point load cylinder 2004 is connected by a pushrod2014 to point load rail 1612 to thereby raise and lower the point loadrail 1612. Fluid pressure (hydraulic or Pneumatic) is used to operatethe various cylinders of the tape and substrate release mechanismactuator. The fluid pressure is supplied by pumps, solenoid valves, andconduits (not shown). A lift rail cylinder 2010 is connected by apushrod 2012 to pull links 2008 which in turn is connected to a liftrail horizontal support 2022. The lift rail cylinder 2010 thereby raisesand lowers the lift rail horizontal support 2022. The lift railhorizontal support 2022 is connected to lift rails 1614 by lift railvertical support 2020. The tensioning pin cylinders 1622 are alsosupported on the lift rail horizontal support 2022. This configurationallows the lift rails 1614 to be raised and lowered without requiringindependent adjustment of the pin cylinders 1622. The pin cylinders 1622are connected to the tensioning pin rail 1616 by a pushrod 2016 suchthat the pin cylinders 1622 can raise and lower tensioning pins 1724. Asupport plate 2002 provides support to the various components of thetape and substrate release mechanism and in conjunction with the chamberlid 1620 and the bellows 1624 provides a sealed environment for the topof chamber 1906.

The method 2500 further provides step 2504 wherein the pin cylinders 622are activated to lower tensioning pins 1724 so that the pins 1724 extendthrough slots 206 in tape 202 and thereby lock the sides of the tape 202in position. The point load cylinder 2004 is also activated to lower thepoint load rail 1612 such the point loads 1728 contact the approximatecenter of tape 202 and apply force to the center of substrates 102. Themethod 2500 then proceeds to step 2506 wherein the sides of the tape 202are initially raised. This position is shown in FIG. 20B, after thepoint loads 1728 and the tensioning pins 1724 have been lowered, liftrail cylinder 2010 is activated to raise lift rail horizontal support2022 thereby lifting tape Supports 1720 and the sides of the tape 202.The method 2500 then proceeds to step 2508 and etchant is then suppliedvia etchant supply conduit 1714 to etchant spray nozzles 1712 and theetchant spray 1716 is directed toward the tape 202 and substrate 102interface.

After the etchant spray 1716 has started, the method 2500 proceeds tostep 2510 wherein the sides of the tape are raised further to form acrevice 2024 as shown in FIG. 200. The etchant spray 1716 can then reachfurther into crevice 2024 to release the substrate 102 from the tape202, while the epitaxial layers remain adhered to the tape 202. The liftrail cylinder 2010 continues to raise the lift rails 1614 and the sidesof the tape 202 to further increase the size of the crevice 2024 whilethe etchant spray 1716 is continued as shown in step 2512 of method2500.

In step 2514 of method 2500, the substrates 102 have completely releasedfrom the tape 202, as shown in FIG. 20D. The etchant spray 1716 isterminated at this point. The point load cylinder 2004 raises the pointloads 1728 so that they no longer contact the tape 202. The pincylinders 1622 also lift tensioning pins 1724 such that they no longerengage slots 206 in tape 202, and the sides of the tape 202 arereleased.

The method 2500 then proceeds back to step 2502 where the tape andsubstrate release mechanism returns to its position as shown in FIG.20A. The next length of tape and substrate assembly can then be loadedinto the etching section 1604, while the released tape 202 with theepitaxial layers thereon, and the released substrates 102 aresimultaneously directed out of the etching section 1604 through the tapeunload section 1608 and the substrate unload section 1606, respectively.

In some embodiments, the tape 202 proceeds to tape post etch processingsections as shown in FIG. 3A. In some embodiments, the substrates 102proceed to substrate post etch Processing sections also as shown in FIG.3A. The etchant sprayed during the process may be drained into a sump(not shown). In some embodiments, the etchant may proceed to an etchantProcessing section such as a filter, prior to being returned to thesump. In some embodiments, a sump may not be used, and fresh etchant issupplied to the etchant spray nozzles 1712. In these embodiments, theused etchant may be collected for cleaning or disposal. In someembodiments all of the nozzles are sprayed continuously. In otherembodiments, the nozzles are cycled on and off in sequence so that thetotal volume of etchant required for the system is reduced. In otherembodiments, the exhaust is passed through a condenser and thecondensate is sent back to the sump for reuse.

FIGS. 21A-21D illustrate various embodiments of point loads that may beused in conjunction with the various apparatus described above. Forexample in one embodiment the point loads shown in FIGS. 21A-21D may beused in place of point load 1728 of apparatus 1600.

FIG. 21A shows a semispherical point load 2100 having a pushrod 2108 anda semispherical rigid portion 2110. The semispherical portion 2110 iscovered by a conformal semispherical compressible layer 2112. Thesemispherical point load 2100 applies pressure in a substantiallycircular region, which may be adjustable as described below with respectto FIGS. 22A-22C.

FIG. 218 shows a linear point load 2102 having a pushrod 2108 and alinear rigid portion 2114. The linear rigid portion 2114 is covered by aconformal linear compressible layer 2116. The linear point load 2102 issimilar in function to point load 2100, however point load 2102 appliespressure along an elongated linear region.

FIG. 210 shows a triangular point load 2104 having a pushrod 2108 and atriangular rigid portion 2118. The triangular rigid portion 2118 iscovered by a conformal triangular compressible layer 2120. Thetriangular point load 2104 is similar in function to point load 2100,however point load 2104 applies pressure in a relatively smaller region(point) than point load 2100.

FIG. 21D shows a dual triangular point load 2106 having a pushrod 2108and a dual triangular rigid portion 2122. The dual triangular rigidportion 2122 is covered by a conformal dual triangular compressiblelayer 2124. The dual triangular point load 2104 is similar in functionto the triangular point load 2104, however point load 2106 appliespressure to two regions (points).

The pushrods 2108 of the above point loads 2100, 2102, 2104, and 2106may be connected to associated components of the above-describedapparatus. For example the pushrods 2108 may be connected to the pointload mounting holes 1806 of apparatus 1600 as shown in FIG. 18, using afastener that extends through the point load mounting holes 1806. Theselection of which of the point loads should be used maybe dependentupon materials of the tape, epitaxial layers, on operational parametersof the various apparatus, combinations thereof, etc. The compressiblelayer of the various point loads may be formed of a gasket-type materialsuch as an ethylene propylene diene monomer (EPDM) or an expandedPolytetrafluoroethylene (ePTFE).

FIGS. 22A-22C illustrate how the compressible layers of the point loads2100, 2102, 2104 and 2106 affect the ELO process. While FIGS. 22A-220show the semispherical point load 2100 of FIG. 21A, the same principlesdescribed below are equally pertinent to the other point loads. In FIG.22 the point load 2100 is shown contacting the tape 202 and substrate102 with a baseline amount of pressure. Also in FIG. 22, a baselineamount of tension is applied to tape 202. The combination of thepressure applied by the point load 2100 and the tension applied to tape202 results in angle α between the substrate 102 and the tape 202. InFIG. 22B, the amount of tension applied to tape 202 has been reducedbelow the baseline, while the pressure applied by the point load 2100has been maintained at the baseline pressure. This combination of thepressure applied by the point load 2100 and the tension applied to tape202 results in angle β between the substrate 102 and the tape 202. InFIG. 220, the amount of tension applied to tape 202 has been maintainedat the baseline, while the pressure applied by the point load 2100 hasbeen increased above the baseline pressure. This combination of thepressure applied by the point load 2100 and the tension applied to tape202 results in angle β between the substrate 102 and the tape 202. Thepressure applied by the point load 2100 and the tension applied to tape202 is selected to maximize the etching rate of the etching processwhile minimizing or eliminating damage to the epitaxial layers that mayoccur during the etching process.

It is appreciated the present lift off systems and methods arecompatible with a variety of wafer configurations. In one embodiment thesubstrate 102 may contain or be formed of a variety of materials, suchas Group III/V materials, and may be doped with other elements. In oneembodiment, the materials can include Groups III/V semiconductormaterials, and may be doped with other elements. In one embodiment,growth substrate 102 contains gallium arsenide, doped gallium arsenide,gallium arsenide alloy, indium aluminum gallium phosphide alloys, indiumaluminum phosphide alloys, indium gallium phosphide alloys, other groupIII/V semiconductors, germanium, materials with similar latticeconstants, derivatives thereof, etc. The sacrificial layer may containaluminum arsenide, gallium aluminum arsenide, derivatives thereof,alloys thereof, or combinations thereof. The sacrificial layer 104 mayhave a thickness of about 20 nm or less, preferably, within a range fromabout 1 nm to about 10 nm, and more preferably, from about 4 nm to about6 nm.

In some embodiments, the epitaxial material of the epitaxial materiallayer 110 may contain gallium arsenide, aluminum gallium arsenide,indium gallium phosphide, alloys thereof, derivatives thereof, orcombinations thereof. The epitaxial material layer 110 may contain onelayer or more layers. In some examples, the epitaxial material layer 110contains a layer having gallium arsenide and another layer havingaluminum gallium arsenide. In another example, the epitaxial materiallayer 110 contains a gallium arsenide buffer layer, an aluminum galliumarsenide passivation layer, and a gallium arsenide active layer. Thegallium arsenide buffer layer may have a thickness within a range fromabout 100 nm to about 500 nm, such as about 300 nm, the aluminum galliumarsenide passivation layer may have a thickness within a range fromabout 10 nm to about 50 nm, such as about 30 nm, and the galliumarsenide active layer may have a thickness within a range from about 500nm to about 2,000 nm, such as about 1,000 nm. In some examples, theepitaxial material layer 106 further contains a second aluminum galliumarsenide passivation layer. The second gallium arsenide buffer layer mayhave a thickness within a range from about 100 nm to about 500 nm, suchas about 300 nm. In other embodiments herein, the epitaxial materiallayer 106 may have a cell structure containing multiple layers. In someembodiments, device structure 106 may contain gallium arsenide, aluminumgallium arsenide, indium aluminum gallium phosphide, indium galliumphosphide, indium aluminum phosphide, alloys thereof, derivativesthereof, or combinations thereof. The device structure may be doped.Device structure 106 may contain one layer of material, but generallycontains multiple layers. The overall thickness of device structure 106,including the sum of all layer thicknesses within the stack, may bewithin a range from about 0.5 μm to about 5 μm, such as from about 1 μmto about 2 μm.

Some implementations relate to apparatus and methods for epitaxial liftoff (ELO) techniques which are used to form thin films and devices. TheELO thin films generally contain epitaxially grown layers which areformed on a sacrificial layer disposed on or over a support or growthsubstrate, such as a substrate. For example, the substrate is a galliumarsenide (GaAs) substrate. A support material or tape may be disposed onthe opposite side of the epitaxial material than the substrate. The tapemay be used to hold the epitaxial material during the etching andremoval steps of the ELO process, and thereafter. In variousembodiments, the apparatus for removing the ELO film from the substrateswithout damaging the ELO film may include an etchant reservoir,substrate handling and tape handling mechanisms, various tension controldevices to protect the epitaxial material during the lift-off processand etchant delivery systems to route the etchant to the sacrificiallayer between the tape and substrate.

In one embodiment, a method for performing an epitaxial lift off processon a tape, epitaxial layer and substrate assembly is provided andincludes supporting the substrates, providing etchant to an interfacebetween the tape and substrates, and lifting the tape from thesubstrates, while providing the etchant, to thereby remove the tape andepitaxial layers from the substrates. Examples include GaAs substratesand hydrofluoric acid as the etchant.

In another embodiment, an apparatus for performing a batch epitaxiallift off process on a tape, epitaxial layer and substrate assembly isprovided and includes a first end having a tape and substrate loadingsection, a second end having a tape unload section and a substrateunload section, and an etching section, wherein the etching section hasa tape tensioning device for engaging the tape, a substrate support forsupporting the substrates, and an etchant supply for providing etchantto the etching section, wherein the tape tensioning device for engagingthe tape lifts the tape from the substrates, while the etchant supplydelivers an etchant to the etching section, to thereby remove the tapeand epitaxial layers from the substrates.

In one embodiment, a method for performing and epitaxial lift offprocess on a tape and substrate assembly comprising a tape, a pluralityof substrates, a plurality of epitaxial layers between the plurality ofsubstrates and the tape, and a plurality of sacrificial layers disposedbetween the substrates and the epitaxial layers, the method comprises:supporting the substrates; providing etchant to an interface between thetape and substrates; exposing the sacrificial layers to the etchantwhile removing material of the sacrificial layer during an etchingprocess; and lifting the tape from the substrates to thereby separatethe tape and epitaxial layers from the substrates. The tape andepitaxial layers can be continuously removed from the substrates duringa continuous process. The tape and epitaxial layers can be removed fromthe substrates in discreet batches during a batch process, and eachbatch comprising a length of tape and a plurality of substrates.

In one embodiment, the substrate support comprises a conveyor belt, theconveyor belt including a plurality of wafer pockets, each wafer pocketbeing configured to accept a single substrate; and the etchant supplycomprises an etchant delivery device that sprays or drips an etchantinto the wafer pockets. The substrate support can comprise a series ofrollers. In one embodiment a tape tensioner further comprises a pointload rail, the point load rail including a plurality of point loads thatprovides force on a center of the tape and substrates. The plurality ofpoint loads can be integral with the point load rail. The plurality ofpoint loads can be discrete elements that are attached to the point loadrail using a fastener.

Thus present systems and methods facilitates efficient and effectiveetching with less etching materials. In addition to saving on theetching material costs themselves, the present systems and methodsfacilitate savings in facilities and equipment that would otherwise haveto be utilized to deal with larger quantities of etchant material.

The foregoing descriptions of specific embodiments have been presentedfor purposes of illustration and description. They are not intended tobe exhaustive or to limit the invention to the precise forms disclosed,and many modifications and variations are possible in light of the aboveteaching. The embodiments were chosen and described in order to explainthe principles and its practical application, to thereby enable othersskilled in the art to utilize the invention and various embodiments withvarious modifications as are suited to the particular use contemplated.It is intended that the scope be defined by the Claims appended heretoand their equivalents.

What is claimed is:
 1. An epitaxial lift off method comprising:receiving a wafer, wherein the wafer includes a substrate, a sacrificialetch layer and an epitaxial lift off component; coupling the wafer to atape; exposing the sacrificial etch layer to an etchant; andmanipulating the epitaxial lift off component while the sacrificial etchlayer is exposed to the etchant, wherein the manipulating is controlledto assist separation of the epitaxial lift off component from thesubstrate prior to final separation of the lift off component and thesubstrate.
 2. An epitaxial lift off method of claim 1 wherein themanipulation is controlled to facilitate exposure of the etchant to anetch face of the sacrificial etch layer.
 3. An epitaxial lift off methodof claim 1 wherein the manipulation is controlled to facilitatemitigation of adverse impacts associated with cracking.
 4. An epitaxiallift off method of claim 1 wherein the manipulation is controlled tofacilitate mitigation of adverse impacts associated with finalseparation of the epitaxial lift off component from the substrate.
 5. Anepitaxial lift off method of claim 1 wherein the manipulating includescausing a force to be applied to a portion of the epitaxial lift offcomponent, wherein the force facilitates widening of a gap between theepitaxial lift off component and the substrate.
 6. A method forperforming a continuous epitaxial lift off process to remove anepitaxial lift off component from a support substrate, the methodcomprising: applying an etchant application component to a sacrificiallayer, wherein the sacrificial layer is between the epitaxial lift offcomponent and the substrate; separating the epitaxial lift off componentfrom the substrate using a separation assistance component; manipulatingthe epitaxial lift off component using the separation assistancecomponent; and coupling the epitaxial lift off component to a tapeconfigured to assist with the manipulation of the epitaxial lift offcomponent while etchant is applied to the sacrificial layer.
 7. Themethod of claim 6, wherein manipulating the epitaxial lift off componentincludes applying a force to increase a gap distance between portions ofthe epitaxial lift off component and the substrate prior to a finalseparation.
 8. The method of claim 7, wherein the force is applied tothe tape and the tape pulls on the epitaxial lift off component.
 9. Themethod of claim 6, wherein manipulating by the separation assistancecomponent includes applying a force to assist mitigation of adverseimpacts associated with a final separation of the epitaxial lift offcomponent.
 10. The method of claim 6, wherein manipulation of theepitaxial lift off component is controlled to facilitate exposure of anetchant to an etch face of the sacrificial layer.
 11. The method ofclaim 6, wherein the tape assists the manipulation and transportation ofthe epitaxial lift off component.
 12. A method for performing etching toseparate the epitaxial lift off component from a support substrate usinga belt and chain apparatus, the method comprising: using an etchantapplication component, wherein the etchant application componentcomprises a substrate pocket and an etchant supply component, whereinthe etchant supply includes a plurality of etching spray nozzles;coupling the epitaxial lift off component to a tape using a tapeapplication component, wherein the sacrificial layer is between anepitaxial lift off component and the substrate; directing an etchantspray towards the tape and the substrate; routing an etchant to thesacrificial layer using an etchant delivery system; and separating theepitaxial lift off component from the substrate using a separationassistance component, wherein the separation assistance componentcomprises a drive link ramp, a chain drive, guide rails, and pin rails.13. The method of claim 12, wherein the drive link ramp comprises anelongated slot, and wherein the ramp has a height that increases from afirst end of the apparatus through an etching section.
 14. The method ofclaim 12, wherein the chain drive comprises a plurality of drive pins.15. The method of claim 12, wherein the separation assistance componentfurther comprises a plurality of point loads configured to contact thecenter of the tape as the tape is driven along and up the increasingheight of the drive link ramp.
 16. The method of claim 12, wherein eachguide rail includes a slot that receives one side of the tape and aplurality of index pin receiving holes.
 17. The method of claim 12,wherein the separation assistance component further comprises two pinrails, wherein each pin rail includes a plurality of index pins.
 18. Themethod of claim 17, wherein the pin rails are operable to be loweredwith respect to the guide rails such that the plurality of index pinsextend into the plurality of the index pin receiving holes and through aplurality of slots along sides of the tape.
 19. A method for performingetching to separate the epitaxial lift off component from a supportsubstrate using a belt and chain apparatus, wherein the belt and chainapparatus comprises: an etchant application component, wherein theetchant application component comprises a substrate pocket and anetchant supply component, wherein the etchant supply includes aplurality of etching spray nozzles; a tape application componentconfigured to couple the epitaxial lift off component to a tape, whereinthe sacrificial layer is between an epitaxial lift off component and thesubstrate; an etchant spray configured to be directed towards the tapeand the substrate; an etchant delivery system configured to route anetchant to the sacrificial layer; and a separation assistance componentconfigured to separate the epitaxial lift off component from thesubstrate, wherein the separation assistance component comprises a drivelink ramp, a chain drive, guide rails, and pin rails.
 20. The method ofclaim 19, wherein the drive link ramp comprises an elongated slot, andwherein the ramp has a height that increases from a first end of theapparatus through an etching section.
 21. The method of claim 19,wherein the separation assistance component further comprises aplurality of point loads and two pin rails, wherein the plurality ofpoint loads are configured to contact the center of the tape as the tapeis driven along and up the increasing height of the drive link ramp, andwherein each pin rail includes a plurality of index pins.